Gap state analysis in electric-field-induced band gap for bilayer graphene
نویسندگان
چکیده
منابع مشابه
Gap state analysis in electric-field-induced band gap for bilayer graphene
The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hopping in gap states. However, the quantitative estimation of gap states has not been conducted. Here, we report the systematic estimation of the energy gap by both quantum capacitance and transport measurements and the density of states ...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2015
ISSN: 2045-2322
DOI: 10.1038/srep15789